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  inchange semiconductor isc product specification isc silicon npn power transistor KSC5367 description collector-emitter breakdown voltage- : v (br)ceo = 800v(min) high switching speed wide area of safe operation applications designed for switching regulator and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1600 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 12 v i c collector current-continuous 3 a i cm collector current-peak 6 a i b b base current-continuous 2 a i bm base current-peak 4 a p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -65~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor KSC5367 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 1600 v v (br)ceo collector-emitter breakdown voltage i c = 5ma; i b = 0 b 800 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 12 v v ce (sat)-1 collector-emitter saturation voltage i c = 0.25a; i b = 25ma 2.5 v v ce (sat)-2 collector-emitter saturation voltage i c = 0.5a; i b = 50ma 4.5 v v ce (sat)-3 collector-emitter saturation voltage i c = 1a; i b = 0.2a b 2.5 v v be (sat) base-emitter saturation voltage i c = 3a; i b = 0.6a b 1.5 v i cbo collector cutoff current v cb = 1600v; i e = 0 20 a i ebo emitter cutoff current v eb = 12v; i c =0 20 a h fe-1 dc current gain i c = 0.4a; v ce = 3v 12 35 h fe-2 dc current gain i c = 5ma; v ce = 10v 8 c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 40 pf switching times t on turn-on time 0.5 s t s storage time 2.2 s t f fall time i c = 0.5a; i b1 = 42ma; i b2 = -333ma;v cc = 125v 0.5 s ton turn-on time 0.5 s ts storage time 4.0 s tf fall time i c = 1a; i b1 = 0.2a; i b2 = -0.4a;v cc = 250v 0.5 s isc website www.iscsemi.cn 2


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